March 7, 2017

Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This e-book offers a single-source connection with one of many tougher reliability matters plaguing sleek semiconductor applied sciences, detrimental bias temperature instability. Readers will make the most of state-of-the artwork insurance of study in subject matters equivalent to time established disorder spectroscopy, anomalous disorder habit, stochastic modeling with extra metastable states, multiphonon thought, compact modeling with RC ladders and implications on gadget reliability and lifetime.

Show description

Read or Download Bias Temperature Instability for Devices and Circuits PDF

Best circuits books

Multi-Chip Module Test Strategies

MCMs at the present time encompass advanced and dense VLSI units fixed into applications that let little actual entry to inner nodes. The complexity and price linked to their try and prognosis are significant stumbling blocks to their use. Multi-Chip Module attempt options offers state of the art attempt concepts for MCMs.

Fiber Optic Technology - Applications to Commercial, Industrial, Military, and Space Optical Systems

This booklet bargains accomplished assurance of the optimal layout of a variety of fiber optic platforms. the writer avoids advanced arithmetic and derivations, yet deals the equations essential to eloquently describe fiber optic parts and platforms. clarity is more advantageous via first-class figures, diagrams and graphs.

Power-Switching Converters, Second Edition

After approximately a decade of luck as a result of its thorough assurance, abundance of difficulties and examples, and functional use of simulation and layout, Power-Switching Converters enters its moment variation with new and up to date fabric, solely new layout case reports, and increased figures, equations, and homework difficulties.

ESD testing: from components to systems

With the evolution of semiconductor expertise and international diversification of the semiconductor company, checking out of semiconductor units to structures for electrostatic discharge (ESD) and electric overstress (EOS) has elevated in significance. ESD trying out: From parts to structures updates the reader within the new checks, try out versions, and strategies within the characterization of semiconductor elements for ESD, EOS, and latchup.

Additional resources for Bias Temperature Instability for Devices and Circuits

Sample text

34. C. International Electron Devices Meeting, (IEDM), pp. 4, 2003. 35. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, N. Revil, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s”, Technical Digest. International Electron Devices Meeting, (IEDM), pp. 109–112, 2004. 36. V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability Vol. 46, pp. 1–23, 2006. 37. Hans Reisinger, Ulrich Brunner, Wolfgang Heinrigs, Wolfgang Gustin, and Christian Schl¨under, “A Comparison of Fast Methods for Measuring NBTI Degradation”, IEEE Transactions on Device and Materials Reliability, vol.

10. Dieter K. Schroder and Jeff A. Babcock, “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”, J. Appl. Phys. Vol. 1, pp. 1–18, 2003. 1 Bias Temperature Instability Characterization Methods 29 11. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. E. Maes, and U. Schwalke, “Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics”, IEEE Electron Device Letters, Vol. 24, No. 2, pp.

As such, it appears beneficial to measure the thermal resistance for the given wafer/chuck system. 4) to acquire Rth sub,0 , α , and T0 . We measured several different devices of different technology and different substrate types as depicted in Fig. 4. The type and thickness of the substrate have the largest impact on the thermal resistance. For all investigated technologies the data can be reasonably well approximated by a linear relationship, further supporting the previously stated assumptions.

Download PDF sample

Rated 4.14 of 5 – based on 18 votes