By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)
This e-book offers a single-source connection with one of many tougher reliability matters plaguing sleek semiconductor applied sciences, detrimental bias temperature instability. Readers will make the most of state-of-the artwork insurance of study in subject matters equivalent to time established disorder spectroscopy, anomalous disorder habit, stochastic modeling with extra metastable states, multiphonon thought, compact modeling with RC ladders and implications on gadget reliability and lifetime.
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34. C. International Electron Devices Meeting, (IEDM), pp. 4, 2003. 35. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, N. Revil, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s”, Technical Digest. International Electron Devices Meeting, (IEDM), pp. 109–112, 2004. 36. V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability Vol. 46, pp. 1–23, 2006. 37. Hans Reisinger, Ulrich Brunner, Wolfgang Heinrigs, Wolfgang Gustin, and Christian Schl¨under, “A Comparison of Fast Methods for Measuring NBTI Degradation”, IEEE Transactions on Device and Materials Reliability, vol.
10. Dieter K. Schroder and Jeff A. Babcock, “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”, J. Appl. Phys. Vol. 1, pp. 1–18, 2003. 1 Bias Temperature Instability Characterization Methods 29 11. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. E. Maes, and U. Schwalke, “Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics”, IEEE Electron Device Letters, Vol. 24, No. 2, pp.
As such, it appears beneficial to measure the thermal resistance for the given wafer/chuck system. 4) to acquire Rth sub,0 , α , and T0 . We measured several different devices of different technology and different substrate types as depicted in Fig. 4. The type and thickness of the substrate have the largest impact on the thermal resistance. For all investigated technologies the data can be reasonably well approximated by a linear relationship, further supporting the previously stated assumptions.
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